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| BSP 319 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * Avalanche rated * VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 319 Type BSP 319 VDS 50 V ID 3.8 A RDS(on) 0.07 Package SOT-223 Marking BSP 319 Ordering Code Q67000-S273 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 3.8 Unit A ID IDpuls 15 TA = 29 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 90 mJ ID = 3.8 A, VDD = 25 V, RGS = 25 L = 6.2 mH, Tj = 25 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot 14 20 V W TA = 25 C 1.8 Semiconductor Group 1 Sep-12-1996 BSP 319 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 70 10 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.06 2 V VGS = 0 V, ID = 0.25 mA, Tj = 0 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.07 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 5 V, ID = 2.4 A Semiconductor Group 2 Sep-12-1996 BSP 319 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 3 8 750 240 120 - S pF 1000 360 180 ns 20 30 VDS 2 * ID * RDS(on)max, ID = 2.4 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Rise time tr 55 85 VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Turn-off delay time td(off) 210 260 VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Fall time tf 120 160 VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 319 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.95 50 0.07 3.8 15 V 1.3 ns C Values typ. max. Unit TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 7.6 A, Tj = 25 C Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 Sep-12-1996 BSP 319 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 5 V 4.0 A 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 ID 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 319 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 9 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.22 Ptot = 2W h k j l g e id c f VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 a ID 7 6 5 4 3 2 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 j b kif g d ce h d e f bg h i j k l 1 0 VGS [V] = a 0.02 0.00 V 5.0 a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 20 A 14 S 12 ID 16 14 12 gfs 11 10 9 8 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VGS 5.0 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 A ID 18 Semiconductor Group 6 Sep-12-1996 BSP 319 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2.4 A, VGS = 5 V 0.17 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 0.14 VGS(th) 3.6 3.2 2.8 0.12 0.10 98% 0.08 0.06 0.04 2.4 typ 98% 2.0 typ 1.6 2% 1.2 0.8 0.02 0.00 -60 -20 20 60 100 C 160 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A IF 10 1 Ciss Coss 10 -1 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 319 Avalanche energy EAS = (Tj ) parameter: ID = 3.8 A, VDD = 25 V RGS = 25 , L = 6.2 mH 100 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) 60 V 58 EAS 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 C 160 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Semiconductor Group 8 Sep-12-1996 BSP 319 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996 |
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